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savantic semiconductor product specification silicon npn power transistors 2SD898 description with to-3 package built-in damper diode high voltage ,high power dissipation wide area of safe operation applications for tv horizontal deflection output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 1500 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a i cm collector current-peak 3.5 a p t total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SD898 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =200ma; i c =0; 6 v v cesat collector-emitter saturation voltage i c =2.5a;i b =0.8 a 5.0 v v besat base-emitter saturation voltage i c =2.5a;i b =0.8 a 1.5 v i ces collector cut-off current v ce =1500v;r be =0 0.5 ma i ebo emitter cut-off current v eb =6v;i c =0 50 200 ma h fe dc current gain i c =0.5a ; v ce =5v 10 40 v f diode forward voltage i f =3a 2.2 v downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SD898 package outline fig.2 outline dimensions downloaded from: http:///

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